Growth window and possible mechanism of millimeter-thick single-walled carbon nanotube forests.

Our group recently reproduced the water-assisted growth method, so-called "SuperGrowth", of millimeter-thick single-walled carbon nanotube (SWNT) forests by using C2H4/H2/H2O/Ar reactant gas and Fe/Al2O3, catalyst. In this current work, a parametric study was carried out on both reaction and catalyst conditions. Results revealed that a thin Fe catalyst layer (about 0.5 nm) yielded rapid growth of SWNTs only when supported on Al2O3, and that Al2O3 support enhanced the activity of Fe, Co, and Ni catalysts. The growth window for the rapid SWNT growth was narrow, however. Optimum amount of added H2O increased the SWNT growth rate but further addition of H2O degraded both the SWNT growth rate and quality. Addition of H2 was also essential for rapid SWNT growth, but again, further addition decreased both the SWNT growth rate and quality. Because Al2O3 catalyzes hydrocarbon reforming, Al2O3 support possibly enhances the SWNT growth rate by supplying the carbon source to the catalyst nanoparticles. The origin of the narrow window for rapid SWNT growth is also discussed.

Bacterial growth rate and host factors as determinants of intracellular bacterial distributions in systemic Salmonella enterica infections.

Bacteria of the species Salmonella enterica cause a range of life-threatening diseases in humans and animals worldwide. The within-host quantitative, spatial, and temporal dynamics of S. enterica interactions are key to understanding how immunity acts on these infections and how bacteria evade immune surveillance. In this study, we test hypotheses generated from mathematical models of in vivo dynamics of Salmonella infections with experimental observation of bacteria at the single-cell level in infected mouse organs to improve our understanding of the dynamic interactions between host and bacterial mechanisms that determine net growth rates of S. enterica within the host. We show that both bacterial and host factors determine the numerical distributions of bacteria within host cells and thus the level of dispersiveness of the infection.

Growth rate of YBCO single grains containing Y-2411(M)

Y-Ba-Cu-O (YBCO) single grains have the potential to generate large trapped magnetic fields for a variety of engineering applications, and research on the processing and properties of this material has attracted world-wide interest. In particular, the introduction of flux pinning centres to the large grain microstructure to improve its current density, Jc, and hence trapped field, has been investigated extensively over the past decade. Y 2Ba4CuMOx [Y-2411(M)], where M = Nb, Ta, Mo, W, Ru, Zr, Bi and Ag, has been reported to form particularly effective flux pinning centres in YBCO due primarily to its ability to exist as nano-size inclusions in the superconducting phase matrix. However, the addition of the Y-2411(M) phase to the precursor composition complicates the melt-processing of single grains. We report an investigation of the growth rate of single YBCO grains containing Y-2411(Bi) phase inclusions and Y2O3. The superconducting properties of these large single grains have been measured specifically to investigate the effect of Y2O3 on broadening the growth window of these materials. © 2010 IOP Publishing Ltd.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resulting nanowires are markedly less tapered, are free of planar crystallographic defects, and have very high purity with minimal intrinsic dopant incorporation. Importantly, carrier lifetimes are not adversely affected. These results reveal intriguing behavior in the growth of nanoscale materials, and represent a significant advance toward the rational growth of nanowires for device applications.

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics

We investigate how growth parameters may be chosen to obtain high quality GaAs nanowires suitable for optoelectronic device applications. Growth temperature and precursor flows have a significant effect on the morphology, crystallographic quality, intrinsic doping and optical properties of the resulting nanowires. Significantly, we find that low growth temperature and high arsine flow rate improve nanowire optical properties, reduce carbon impurity incorporation and drastically reduce planar crystallographic defects. Additionally, cladding the GaAs nanowire cores in an AlGaAs shell enhances emission efficiency. These high quality nanowires should create new opportunities for optoelectronic devices. © 2008 IEEE.

Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were grown at temperatures as low as 120degreesC by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C2H2/NH3 system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices. (C) 2003 American Institute of Physics.

Nanowires for optoelectronic device applications

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters for GaAs and InP nanowires on the crystal quality were studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires via either two-temperature procedure, or by controlling V/III ratio or growth rate. The crystal structure of InP nanowires, ie, WZ or ZB, can also be engineered by just controlling the V/III ratio. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA.